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Advanced materials: high performance variable resistance memory based on MoS2 / polymer multilayer heterojunction

wallpapers News 2020-11-23

variable resistance memory is expected to become the next generation of memory devices also be used as a true rom number generator in the future network information security. Driven by device miniaturization variable resistance memory based on two-dimensional materials has attracted more more attention. However the major problem faced by the current two-dimensional material based variable resistance memory applied to the generation of true rom number is that the device performance will be significantly attenuated during the device cycle which can not guarantee the stable generation of rom data.

therefore researchers Chi Dongzhi Wang Shijie Dr. Yang Ming (currently joining the Department of Applied Physics of Hong Kong Polytechnic University) Dr. Medina Silva Henry from Imre of Singapore Science Technology Bureau (a * star) have studied this problem. They first used the physical vapor phase (PCT patent No.: PCT / sg2018 / 050462) method to grow layered crystalline large area (2 inch) MoS2 multilayer films on silicon dioxide substrate. By controlling the temperature of the film transfer process a polymer layer was formed in the transferred multilayer MoS2 then silver metal was deposited as the top electrode finally gold (bottom electrode) was formed – a novel structure of multi-layer molybdenum disulfide / polymer / multi-layer molybdenum disulfide / polymer / multi-layer molybdenum disulfide – silver (top electrode) variable resistance memory (Singapore patent No.: 2019 / 5984103881v). The variable resistance memory has excellent performance such as small driving voltage (0.4 V) high switching ratio (> 104) stable device cycle performance. Among them the distribution of high resistance state has the strongest non correlation is expected to be a true rom number. In this work the polymer layer is introduced into the multi-layer MoS2 which greatly improves the stability of the device illustrates its application potential in true rom number. Among them low-power ion sputtering method for large area MoS2 film growth low-temperature transfer technology have the potential to be applied to large-scale industrial production are expected to be applied to flexible variable resistance memory or transparent electronic devices in the future. The related results were published in the international famous journal of materials science "advanced materials" (DOI: 10.1002 / ADMA. 202002704) with the title of "MoS2 / polymer heterostructures enabling stable resistant switching multistate romness".


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